By Evgeni Gusev, Eric Garfunkel, Arthur Dideikin
The most objective of this e-book is to check fresh growth and present prestige of MEMS/NEMS applied sciences and units. a number of vital parts are mentioned: heritage of analysis within the box, equipment physics, examples of sucessful functions, sensors, fabrics and processing features. The authors who've contributed to the e-book characterize a various team of top scientists from educational, commercial and governmental labs all over the world who carry a extensive array of backgrounds equivalent to gadget physics, technologists, electric and mechanical engineering, floor chemistry and fabrics science). The contributions to this publication are obtainable to either specialist scientists and engineers who have to stay alongside of innovative learn, and rookies to the sphere who desire to examine extra in regards to the fascinating easy and utilized learn matters proper to micromechanical units and applied sciences.
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Additional resources for Advanced Materials and Technologies for Micro Nano-Devices, Sensors and Actuators
MEMS The probe storage chip developed at Nanochip has three main layers formed by bonding three wafers, as it is schematically shown in Figure 6. The bottom layer (CMOS wafer) has an array of actuated cantilevers with AFM-type tips formed on top of CMOS electronics. The middle layer (Mover wafer) contains an X–Y microscanner or micro-mover. Finally, the top layer (Cap wafer) protects the micromover and provides required mechanical strength to the die. Wafer-level solder bonding provides very strong mechanical connection featuring both liquid-proof sealing and reliable electrical connections between the wafers .
Ferroelectric recording medium uses a layer of ferroelectric material placed between two electrodes. An electric field created between the electrodes forces the domain polarization to be parallel to the applied field. For probe storage application, a conductive tip is a top electrode, while a conductive layer under the ferroelectric medium serves as a bottom electrode. A voltage applied between the tip and the bottom electrode creates a local electric field across the medium and allows for switching a domain polarization in a ferroelectric material to an UP or DOWN state and this can be equivalent to digital information of 1 or 0.
The SiGe layer is used to form cantilever structure. During the structural layer etching steps the oxide HM protects the portion of SiGe layer allowing for the definition of 1 μm thick torsion beams as well as body of cantilevers and the lateral actuators (“nanomover”) – both 3 μm thick. Using CMP steps ensures flatness of the wafer surface after the deposition steps. 52 N. BELOV ET AL. Figure 10. Overview of a part of cantilever array. Figure 11. Schematic cross-section of actuated cantilever structure: 1 – oxide; 2 – Top CMOS metal – aluminum; 3 – SiC; 4 – SiGe; 5 – Pt; 6 – Ni; 7 – Au.
Advanced Materials and Technologies for Micro Nano-Devices, Sensors and Actuators by Evgeni Gusev, Eric Garfunkel, Arthur Dideikin